The PlasmaPro 100 RIE modules deliver isotropic and anisotropic dry etching for an extensive range of processes. It is suitable for research and production customers, providing a controlled environment that improves process repeatability with load-lock. It is packaged with a ICP RIE unit system that utilises a high-density inductively coupled plasma to achieve fast etch rates. The process modules offer excellent uniformity, high-throughput, high-precision and low-damage processes for wafer sizes up to 100 mm, supporting a number of markets including, GaAs & InP laser optoelectronics, microLEDs & metalenses, SiC & GaN power electronics/RF and MEMS & sensors.
- Compatible with all wafer sizes up to 100mm
- Single-wafer or batch processi
ng with excellent process control - High control of the gases and plasma power
- Excellent uniformity, high throughput and high precision processes
- Wide temperature range electrode, -150°C to 400°C
- High etch rate and high selectivity
- Low damage etch and high repeatability processing
- He backside cooling for optimum temperature control
The system is equipped with the subsequent process gas: C4F8, CHF3, CF4, SF6, Ar, O2.
